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| 2SK1968 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 600 30 12 48 12 100 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1968 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V * ID = 6 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.68 10 250 3.0 0.88 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 5 10 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1800 400 60 25 70 145 65 1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 12 A, VGS = 0 IF = 12 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 670 -- ns -------------------------------------------------------------------------------------- 2SK1968 Power vs. Temperature Derating 200 Pch (W) Maximum Safe Operation Area 100 30 10 10 10 0 s 150 (A) s Power Dissipation 100 50 Drain Current 1m DC PW s Op = 1 0 er at ms( 3 ion 1 (T sho c = t) Operation in this area 1 is limited by R 25 DS(on) C ) ID 0.3 0.1 5 Ta = 25C 10 30 100 Drain to Source Voltage 300 1000 V DS (V) 0 50 100 Case Temperature 150 Tc (C) 200 Typical Output Characteristics 20 10 V (A) 16 6V 5V 20 Pulse test (A) 16 Typical Transfer Characteristics Pulse test VDS = 20 V ID ID Drain Current 12 4.5 V 8 12 Tc = 75C 8 25C -25C 4 Drain Current 4 VGS = 4 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 2SK1968 Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) 20 Pulse test Static Drain to Source on State Resistance vs. Drain Current 5 16 15 A 12 2 1 0.5 VGS = 10 V 8 10 A ID=5A 4 0.2 Pulse test 0.1 1 2 5 10 Drain Current 20 50 I D (A) 100 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Temperature Pulse test VGS = 10 V 1.6 Forward Transfer Admittance |y fs | (S) 2.0 50 Forward Transfer Admittance vs. Drain Current Pulse test V DS = 20 V 20 10 5 Tc = -25C 25C 75C 1.2 10 A 0.8 ID = 5 A 2 1 0.5 0.1 0.2 0.4 0 -40 0 40 80 120 160 Gate to Source Voltage V GS (V) 0.5 1 2 5 10 Drain Current I D (A) 20 2SK1968 Body to Drain Diode Reverse Recovery Time 3000 t rr (ns) 2000 (pF) di/dt = 100 A/s V GS = 0, Ta = 25C Typical Capacitance vs. Drain to Source Voltage 5000 2000 1000 500 200 100 50 20 Coss 10 20 30 Drain to Source Voltage 40 50 V DS (V) VGS = 0 f = 1 MHz Coss Ciss Reverse Recovery Time 500 200 100 0.1 0.2 0.5 1 2 Reverse Drain Current Capacitance 5 10 20 I DR (A) C 1000 10 0 Dynamic Input Characteristics 1000 V DS (V) VGS 16 V GS (V) I D = 12 A VDD = 100 V 250 V 400 V 20 300 200 (ns) Switching Characteristics 800 td(off) Gate to Source Voltage Drain to Source Voltage 600 VDS 12 Switching Time t 100 tf tr 20 10 0.1 0.2 VGS = 10 V, PW = 5 s duty 1 %, VDD 30 V 0.5 1 2 5 10 Drain Current I D (A) 20 td(on) 50 400 8 VDD = 400 V 250 V 100 V 20 40 Gate Charge 60 Qg 80 (nc) 200 4 0 100 0 2SK1968 Reverse Drain Current vs. Source to Drain Voltage 20 I DR (A) Reverse Drain Current Pulse test 16 12 VGS = 0, -5 V 10 V 8 4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normal Transient Thermal Impedance vs. Pusle Width 3 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 0.1 0.3 0.1 0.05 0.02 0 .01 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM D= PW T 0.03 1s t ho Pu lse PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK1968 Switching Time Test Circuit and Waveform 90% Vin Monitor D.U.T. RL Vout Vin 10 V 50 V DD = 30 V t d(on) 10% 10% Vout Monitor Vin 10% 90% tr 90% t d(off) tf |
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